Magnetic sensor and hall sensor, each using anomalous hall effect, and method for manufacturing hall sensor
US11815569B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Nov 29, 2019 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | Sep 11, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/0052
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a magnetic sensor using an anomalous Hall effect. Nonmagnetic metal layers are disposed on and below a ferromagnetic material so as to form a Hall voltage corresponding to a change in applied magnetic field. Linearity and saturation magnetization of the magnetic sensor depend on a thickness of the nonmagnetic metal layer and a thickness of the ferromagnetic material. In addition, provided is a Hall sensor using an anomalous Hall effect. Nonmagnetic metal layers are formed with respect to a ferromagnetic layer, and CoFeSiB constituting the ferromagnetic layer has a thickness ranging from 10 Å to 45 Å. A magnetic easy axis is formed in a direction perpendicular to an interface due to interface inducing action of the nonmagnetic metal layers. In addition, the Hall sensor includes a sensing region having a rhombic shape, an electrode line portion having a line shape, and a pad portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.