Patent · US Active

Room-temperature semiconductor maser and applications thereof

US11815588B2 · kind B2 · utility

0Cited by

13References

22Claims

0Family size

Assignee

University of Electronic Science and Technology of China · CN

Inventors

Shirong Bu · Chengdu, CN
Liu Chen · New Taipei, TW
Cheng Zeng · Newmarket, CA
Junsong Ning · Chengdu, CN
Zhanping Wang · Sichuan, CN
Yang Fu · Beijing, CN
Ruyi Wang · Chengdu, CN
Chenle Wang · Chengdu, CN

Key dates

Filing date	Jul 6, 2020
Grant date	Nov 14, 2023
Priority date	—
Expiry date	Aug 31, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH03F2200/72
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A room-temperature semiconductor maser, including a first matching network, a second matching network, a heterojunction-containing transistor, and a resonant network. The output end of the first matching network is connected to the drain of the heterojunction-containing transistor. The input end of the second matching network is connected to the source of the heterojunction-containing transistor. The gate of the heterojunction-containing transistor is connected to the resonant network. The pumped microwaves are fed into the input end of the first matching network.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.