Method for producing a diode
US11817353B2 · kind B2 · utility
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1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2022 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | Jan 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.