Electrical contact fabrication

US11817521B2 · kind B2 · utility

Assignee

• Raytheon Company · US

Inventors

• Andrew Clarke · Grafton, GB
• David R. Rhiger · Lompoc, US
• Chad W. Fulk · Ventura, US
• Stuart B. Farrell · Wheat Ridge, US
• James Pattison
• Jeffrey M. Peterson · Lompoc, US
• Chad M. Althouse · Englewood Cliffs, US

Key dates

• Filing date: Sep 15, 2021
• Grant date: Nov 14, 2023
• Expiry date: Feb 8, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/206

Abstract

In one aspect, a method includes forming an electrical path between p-type mercury cadmium telluride and a metal layer. The forming of the electrical path includes depositing a layer of polycrystalline p-type silicon directly on to the p-type mercury cadmium telluride and forming the metal layer on the layer of polycrystalline p-type silicon. In another aspect, an apparatus includes an electrical path. The electrical path includes a p-type mercury cadmium telluride layer, a polycrystalline p-type silicon layer in direct contact with the p-type mercury cadmium telluride layer, a metal silicide in direct contact with the polycrystalline p-type silicon layer, and an electrically conductive metal on the metal silicide. In operation, holes, indicative of electrical current on the electrical path, flow from the p-type mercury cadmium telluride layer to the electrically conductive metal.