Nitride-based light-emitting diode device

US11817528B2 · kind B2 · utility

Assignee

• XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Yung-Ling Lan · Wuhu, CN
• Chan-Chan Ling · Wuhu, CN
• Chi-Ming Tsai · New Taipei, TW

Key dates

• Filing date: Nov 4, 2022
• Grant date: Nov 14, 2023
• Expiry date: Nov 4, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812

Abstract

A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.