Methods for forming memory and memory

US11818875B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventors

• Xiao Zhu · 红钢城街道, CN
• Yi-Hsiang Chen · New Taipei, TW
• Lihui Yang · Zhejiang, CN
• Hung-I Lin · Cambridge, US
• Yun-Chieh Mi · Hefei, CN
• Jinfeng Gong · Tianjin, CN

Key dates

• Filing date: Apr 1, 2021
• Grant date: Nov 14, 2023
• Expiry date: Sep 7, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/482

Abstract

A method for forming a memory includes: providing a substrate, a plurality of discrete bit line structures being located on the substrate, and an area surrounded by the adjacent bit line structures and the substrate and having a central axis; forming, on the substrate, a first conductive film filling an area between the adjacent bit line structures; etching the first conductive film by a first etching process to form a first conductive layer; forming a second conductive film on the top surface of the first conductive layer; and etching the second conductive film and the first conductive layer by a second etching process, the remaining second conductive film and the first conductive layer forming a capacitive contact window.