Image sensor and method for fabricating the same
US11818904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2021 |
| Grant date | Nov 14, 2023 |
| Priority date | — |
| Expiry date | Nov 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.