Stabilised A/M/X materials
US11820927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2019 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Oct 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/125
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a method for preparing a stabilised crystalline A/M/X material comprising an oxide of formula [Z]pOq and a compound of formula [A]a[M]b[X]c, wherein [Z] comprises at least one element Z capable of forming an oxide with a band gap of at least 3 eV; p and q are positive numbers; [A] comprises one or more A cations; [M] comprises one or more M cations; [X] comprises one or more X anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18. Often, the stabilised crystalline A/M/X material is a perovskite. The invention also provides a stabilised crystalline A/M/X material, which can be produced by the process of the invention. The invention further provides materials and devices containing the stabilised crystalline A/M/X material of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.