Patent · US Active

Etching compositions

US11820929B2 · kind B2 · utility

1Cited by
2References
70Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 3, 2021
Grant dateNov 21, 2023
Priority date—
Expiry dateSep 3, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02019
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.