Reagents to remove oxygen from metal oxyhalide precursors in thin film deposition processes
US11821080B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Mar 5, 2021 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Mar 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.