Patent · US Active

Thin free-standing oxide membranes

US11821081B2 · kind B2 · utility

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17Claims
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Assignee

Inventors

Key dates

Filing dateOct 4, 2021
Grant dateNov 21, 2023
Priority date
Expiry dateOct 4, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01Q60/366
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

This disclosure provides systems, methods, and apparatus related to thin free-standing oxide membranes. In one aspect, a method includes providing a substrate. The substrate defines a hole having a diameter of about 500 nanometers to 5000 nanometers. A layer of metal is deposited on the substrate. A supporting layer is deposited on the layer of metal. A first side of the supporting layer is the side that is disposed on the layer of metal. A metal oxide layer is deposited on the first side of the supporting layer and on the substrate. In some implementations, the method further includes removing the supporting layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.