Thin free-standing oxide membranes
US11821081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2021 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Oct 4, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01Q60/366
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This disclosure provides systems, methods, and apparatus related to thin free-standing oxide membranes. In one aspect, a method includes providing a substrate. The substrate defines a hole having a diameter of about 500 nanometers to 5000 nanometers. A layer of metal is deposited on the substrate. A supporting layer is deposited on the layer of metal. A first side of the supporting layer is the side that is disposed on the layer of metal. A metal oxide layer is deposited on the first side of the supporting layer and on the substrate. In some implementations, the method further includes removing the supporting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.