Low defect high capacitance thin solid electrolyte capacitor and method of fabrication thereof
US11823836B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 16, 2022 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Jun 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G11/86
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a capacitor that includes: forming a three-dimensional structure over a substrate, the three-dimensional structure having a region with elongated pores extending towards the substrate from a top surface of the three-dimensional structure remote from the substrate or elongated columns extending away from the substrate towards the top surface of the three-dimensional structure remote from the substrate; forming a first electrode layer over a surface of the region of the three-dimensional structure, the first electrode conformal to the surface of the region; forming an intermediate layer over the first electrode layer; and forming a second electrode layer over the intermediate layer, the second electrode layer conformal to the intermediate layer, wherein forming the intermediate layer includes: forming a solid-state electrolyte layer partially conformal to the first electrode layer; and forming a dielectric layer conformal to the first electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.