Method of manufacturing a semiconductor device including bonding layer and adsorption layer
US11824035B2 · kind B2 · utility
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13References
18Claims
0Family size
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Key dates
| Filing date | May 27, 2022 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | May 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first adsorption layer, a first bonding layer, a second bonding layer, and a second adsorption layer stacked on a first substrate, and a conductive pattern structure penetrating through the first adsorption layer, the first bonding layer, the second bonding layer and the second adsorption layer. The first and second bonding layers are in contact with each other, and each of the first and second adsorption layers includes a low-κ dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.