Trench gate IGBT with carrier trap under the control electrode
US11824056B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | May 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
Abstract
A semiconductor device includes a semiconductor part, first and second electrodes, a control electrode and a control interconnect. The semiconductor part includes first to sixth layers and is provided between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third layer is provided between the second layer and the second electrode. The fourth and fifth layers are arranged between the first layer and the first electrode. The second electrode and the control interconnect are arranged on the semiconductor part. The control electrode is provided between the second electrode and the semiconductor part. The sixth layer is provided between the first layer and the control interconnect. The fifth semiconductor layer is provided between the first electrode and the sixth layer. The first semiconductor layer includes a carrier trap provided between the fifth and sixth layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.