Display apparatus having flourine at interfaces of semiconductor layer and manufacturing method thereof
US11825704B2 · kind B2 · utility
0Cited by
9References
13Claims
0Family size
Assignee
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Key dates
| Filing date | May 26, 2021 |
| Grant date | Nov 21, 2023 |
| Priority date | — |
| Expiry date | Jun 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
Abstract
An embodiment of a display apparatus includes a substrate, a buffer layer on the substrate, a thin film transistor including a semiconductor layer disposed on the buffer layer and including a silicon semiconductor, and a gate electrode insulated from the semiconductor layer, and an insulating layer covering the semiconductor layer, in which a concentration of fluorine at an interface between the semiconductor layer and the buffer layer is at least 10% of a concentration of the fluorine at the interface between the semiconductor layer and the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.