Monocrystal silicon carbide grids and radiation detection systems comprising thereof
US11827387B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Aug 23, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Jul 23, 2042 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB64G1/105
- WIPO fieldTransport
- WIPO sectorMechanical engineering
Abstract
Disclosed here are monocrystalline silicon carbide grids and radiation detections systems comprising such grids. Specifically, a grid comprises a support frame and a grid portion. The support frame is used for installing and supporting the grid in a detection system. The grid portion comprises a plurality of ribs, which defines a plurality of grid openings. The grid portion is used to support various components (e.g., a membrane) while allowing radiation transmission through the grid. For example, the grid portion can support the pressure up to 2 bars. The open area fraction of the grid portion can be at least 50%, or even at least 90%. The grid portion is integrated with the support frame forming monocrystal silicon carbide (e.g., 4H—SiC polymorph). In some examples, the primary surface of the grid is oriented within 8° of the crystallographic c-axis planes of the monocrystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.