Methods and devices for growing scintillation crystals
US11827826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2022 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Jan 13, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure relates to a method for growing a crystal. The method includes: weighting reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.