High-precision etching method

US11827988B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huilong Zhu · Poughkeepsie, US
• Xiaogen YIN · 红钢城街道, CN
• Chen-Yu Li · New Taipei, TW
• Anyan DU · Beijing, CN
• Yongkui ZHANG · Beijing, CN

Key dates

• Filing date: Aug 18, 2022
• Grant date: Nov 28, 2023
• Expiry date: Aug 18, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/306
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An embodiment of the present disclosure provides an etching method, having the following steps: forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier; and removing the modified layer. When a semiconductor is processed, this method achieves precise control over the etching thickness and improves the etching rate at the same time.