Methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition
US11827993B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Sep 17, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are methods of forming active materials for electrochemical cells using low-temperature electrochemical deposition, e.g., less than 200° C. Specifically, these processes allow precise control of the morphology, composition, and size of deposited structures. For example, the deposited structure may be doped, alloyed, or surface treated during their deposition using a combination of different precursors. In particular, silicon structure may be pre-lithiated while these structures are being formed. The selection of working electrodes (surface size and properties), electrolyte composition, and other parameters result in different types of structures, e.g., precipitating from the electrolyte or deposited on the electrode. Low-temperature plating does not require a lot of energy and volatile and invisible precursors. Furthermore, this plating produces a more confined waste stream, suitable for post-reaction recycling. Finally, low-temperature electrochemical deposition can be readily scaled up such that plating bathes and electrode sizes can be chosen to fit the production requirements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.