Patent · US Active

Semiconductor memory devices and methods of operating semiconductor memory devices

US11829614B2 · kind B2 · utility

0Cited by
8References
20Claims
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Assignee

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Key dates

Filing dateJun 17, 2022
Grant dateNov 28, 2023
Priority date
Expiry dateJun 17, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F11/1068
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A semiconductor memory device includes a buffer die and a plurality of memory dies. An error correction code (ECC) engine in one of the memory dies performs an RS encoding on a main data to generate a parity data and performs a RS decoding, using a parity check matrix, on the main data and the parity data. The parity check matrix includes sub matrixes and each of the sub matrixes corresponds to two different symbols. Each of the sub matrixes includes two identity sub matrixes and two same alpha matrixes, the two identity sub matrixes are disposed in a first diagonal direction of the sub matrix and the two same alpha matrixes are disposed in a second diagonal direction. A number of high-level value elements in a y-th row of the parity check matrix is the same as a number of high-level value elements in a (y+p)-th row.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.