Semiconductor device and method of fabricating the same
US11830737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | May 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are semiconductor device fabricating method and semiconductor device fabricated by the same. The method includes forming on a lower mask layer first upper mask patterns and sacrificial spacers that cover sidewalls of the first upper mask patterns, forming first holes in the lower mask layer below the first upper mask patterns, forming second holes in the lower mask layer not covered by the first upper mask patterns and the sacrificial spacers, forming second upper mask patterns filling a space between the sacrificial spacers on the lower mask layer and also forming sacrificial patterns filling the first and second holes, removing the sacrificial spacers, using the first and second upper mask patterns to etch the lower mask layer, and removing the sacrificial patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.