Shaping nanomaterials by short electrical pulses
US11830743B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Feb 23, 2042 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry-state non-contact method for patterning of nanostructured conducting materials is disclosed. Short self-generated electron-emission pulses in air at atmospheric pressure can enable an electron-emission-based (field enhancement) interaction between a sharp tungsten tip and elements of the nanostructured materials to cause largely non-oxidative sequential decomposition of the nanostructured elements. Embodiments can employ a substrate/tip gap of 10 to 20 nm, discharge voltages of 25-30 V, and patterning speeds as fast as 10 cm/s to provide precisely patterned nanostructures (<200 nm) that are largely free of foreign contaminants, thermal impact and sub-surface structural changes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.