Patent · US Active

Shaping nanomaterials by short electrical pulses

US11830743B2 · kind B2 · utility

0Cited by
1References
20Claims
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Key dates

Filing dateJul 2, 2021
Grant dateNov 28, 2023
Priority date
Expiry dateFeb 23, 2042

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2201/0145
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A dry-state non-contact method for patterning of nanostructured conducting materials is disclosed. Short self-generated electron-emission pulses in air at atmospheric pressure can enable an electron-emission-based (field enhancement) interaction between a sharp tungsten tip and elements of the nanostructured materials to cause largely non-oxidative sequential decomposition of the nanostructured elements. Embodiments can employ a substrate/tip gap of 10 to 20 nm, discharge voltages of 25-30 V, and patterning speeds as fast as 10 cm/s to provide precisely patterned nanostructures (<200 nm) that are largely free of foreign contaminants, thermal impact and sub-surface structural changes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.