Light sensing device having offset gate electrode and light sensing panel and light sensing display panel using the same

US11830904B2 · kind B2 · utility

Assignee

• HANNSTOUCH SOLUTION INCORPORATED · TW

Inventor

• Sheng-Chia Lin · Tainan, TW

Key dates

• Filing date: Jul 8, 2020
• Grant date: Nov 28, 2023
• Expiry date: Nov 27, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

A light sensing device includes a substrate, a gate electrode, a semiconductor layer, a dielectric layer, a first source/drain electrode, a second source/drain electrode, and a reset electrode. The gate electrode is over the substrate. The semiconductor layer is over the substrate and at least partially overlapping the gate electrode. The dielectric layer spaces the gate electrode from the semiconductor layer. The first source/drain electrode and the second source/drain electrode are respectively connected to the semiconductor layer. The semiconductor layer has a first region and a second region between the first source/drain electrode and the second source/drain electrode, the first region overlaps the gate electrode, and the second region does not overlap the gate electrode. The reset electrode is in contact with the semiconductor layer.