RF switch device having a highly resistive substrate, an isolation layer therein or thereon, and a trap-rich layer therein or thereon
US11830908B2 · kind B2 · utility
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1References
16Claims
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Key dates
| Filing date | Jan 5, 2022 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Jan 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An RF switch device and a method of manufacturing the same are proposed. A trap area is formed in or on a surface of a highly resistive substrate to trap carriers accumulating on the surface of the substrate, thus improving RF characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.