Laterally diffused metal oxide semiconductor structure and method for manufacturing the same

US11830932B2 · kind B2 · utility

Assignee

• Silergy Semiconductor Technology (Hangzhou) Ltd. · CN

Inventors

• Budong You · Hangzhou City, CN
• Hui Yu · Hsinchu, TW
• Meng Wang · Hangzhou City, CN
• Yicheng Du · Zhejiang, CN
• Chuan Peng · Beijing, CN
• Xianguo Huang · Suzhou, CN

Key dates

• Filing date: Jan 20, 2021
• Grant date: Nov 28, 2023
• Expiry date: Feb 13, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A laterally diffused metal oxide semiconductor structure can include: a base layer; a source region and a drain region located in the base layer; first dielectric layer located on a top surface of the base layer and adjacent to the source region; a voltage withstanding layer located on the top surface of the base layer and located between the first dielectric layer and the drain region; a first conductor at least partially located on the first dielectric layer; and a second conductor at least partially located on the voltage withstanding layer, where the first and second conductors are spatially isolated, and a juncture region of the first dielectric layer and the voltage withstanding layer is covered by one of the first and second conductors.