Voltage rate-of-change control for wide-bandgap-based inverter circuits for driving electric motors
US11831251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Dec 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/123
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An insulated gate field effect transistor (IGFET) based converter circuit is described that includes a direct current input comprising a high voltage input and a low voltage input, an IGFET gate input, and an equivalent phase leg comprising a plurality of parallel-connected cells. The parallel-connected cells each include: a first wide bandgap IGFET having a first drain electrode connected to the high voltage input, a first gate electrode connected to a first gate control input, and a first source electrode; a second wide bandgap IGFET having a second drain electrode connected to the first source electrode, a second gate electrode connected to a second gate control input, and a second source electrode connected to the low voltage input; and a step-inducing inductor coupled to: the first source electrode of the first wide bandgap IGFET, and an output node. The step-inducing inductor is connected to the output node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.