Multifunctional integrated acoustic devices and systems using epitaxial materials
US11831295B2 · kind B2 · utility
1Cited by
0References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2020 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Mar 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/2426
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.