Multi-bit memory cell, analog-to-digital converter, device and method
US11832530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Apr 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a multi-bit memory cell, an analog-to-digital converter, a device and a method. The multi-bit memory cell comprises: a spin-orbit coupling layer and a plurality of magnetic tunnel junctions disposed on the spin-orbit coupling layer, the plurality of magnetic tunnel junctions comprising a plurality of first magnetic tunnel junctions; the plurality of first magnetic tunnel junctions are sequentially arranged along a length direction of the spin-orbit coupling layer, and critical currents of reversals of the magnetizations of free layers of the plurality of first magnetic tunnel junctions are progressively increased or decreased in sequence along the length direction. The present disclosure provides a multi-bit memory unit with simple manufacturing process and structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.