Two dimensional materials for use in ultra high density information storage and sensor devices
US11832535B2 · kind B2 · utility
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Key dates
| Filing date | Dec 18, 2019 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Jan 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/675
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
2D heterostructures comprising Bi2Se3/MoS2, Bi2Se3/MoSe2, Bi2Se3/WS2, Bi2Se3/MoSe2. 2xS2x, or mixtures thereof in which oxygen is intercalated between the layers at selected positions provide high density storage devices, sensors, and display devices. The properties of the 2D heterostructures can be configured utilizing abeam of electromagnetic waves or particles in an oxygen controlled atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.