Independent free-standing graphene film and method of preparing the same
US11834336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2018 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Jul 29, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2204/30
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Proposed is a method of preparing an independent free-standing graphene film. The graphene film is obtained by means of suction filtration of graphene oxide into a film, solid phase transfer, chemical reduction and the like steps. The graphene film is formed by means of physical cross-linking of a single layer of oxidized/reduced graphene oxide. The graphene film has a thickness of 10-2000 atomic layers. The graphene oxide film has a small thickness and a large number of defects inside, so that it has good transparency and excellent flexibility. On the basis of the transfer film-forming method above, an independent free-standing wrinkled graphene film having a nanoscale thickness is prepared by using a poor solvent and a special high temperature annealing process, and an independent free-standing foamed graphene film having a nanoscale thickness is obtained by using a film-forming thickness and a special high temperature annealing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.