Quantum dot and method for producing the same
US11834596B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jul 31, 2020 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Oct 28, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/90
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0≤x<1 and 0≤y≤1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.