Atomic layer deposition with passivation treatment

US11834741B2 · kind B2 · utility

Assignee

• The Board of Trustees of the Leland Stanford Junior University · US

Inventors

• Friedrich B. Prinz · Stanford, US
• Shicheng Xu · Stanford, US
• Timothy Stephen English · Derwood, US
• John Provine · Escalon, US
• Dickson Thian · Stanford, US
• Jan Torgersen · Lillestrøm, NO

Key dates

• Filing date: Sep 7, 2017
• Grant date: Dec 5, 2023
• Expiry date: Apr 14, 2039

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B01J37/349
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method includes: 1) performing an atomic layer deposition cycle including (a) introducing precursors into a deposition chamber housing a substrate to deposit a material on the substrate; and (b) introducing a passivation gas into the deposition chamber to passivate a surface of the material; and 2) repeating 1) a plurality of times to form a film of the material.