Ferroelectric memory and memory element thereof
US11837270B2 · kind B2 · utility
1Cited by
4References
14Claims
0Family size
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Key dates
| Filing date | Feb 6, 2020 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Jul 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory is intended to reduce an applied voltage required at the times of writing and reading. A ferroelectric capacitor includes a ferroelectric film and a top electrode and a bottom electrode including materials with different work functions formed above and below the ferroelectric film. The transistor is connected to either the top electrode or the bottom electrode to select the ferroelectric capacitor. A drive control unit applies, at the times of writing and reading, a voltage lower than that at the time of erasing by a predetermined potential difference to the ferroelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.