Patent · US Active

Semiconductor device

US11837497B2 · kind B2 · utility

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7Claims
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Key dates

Filing dateSep 10, 2021
Grant dateDec 5, 2023
Priority date
Expiry dateFeb 3, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/215
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, including a plurality of protrusions; a plurality of fins formed over the substrate and aligned with the plurality of protrusions; and an isolation structure formed on the substrate and between the protrusions and the fins. An orthographic projection of each of the plurality of fins and an orthographic projection of a corresponding protrusion of the plurality of protrusions on the substrate coincide with each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.