Method for analyzing silicon substrate
US11837510B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Apr 8, 2019 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Feb 13, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N1/32
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.