Patent · US Active

Semiconductor device and power converter

US11837514B2 · kind B2 · utility

0Cited by
1References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 13, 2021
Grant dateDec 5, 2023
Priority date
Expiry dateJun 9, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19107
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to an aspect of the first disclosure, a semiconductor device includes a base plate, a case that surrounds a region immediately above the base plate, a semiconductor chip provided in the region, a sealing resin that fills the region and a barrier layer provided on the sealing resin, wherein the barrier layer has a first surface facing the base plate, a second surface opposite to the first surface, and a convex part protruding upward from the second surface, the first surface has a longer distance to the base plate as getting farther from the center, the convex part is provided avoiding the center, and a height of the convex part is greater than a distance in a thickness direction of the barrier layer between a portion of the first surface immediately below the convex part and a portion of the first surface provided at the center.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.