PIC die with optical deflector for ambient light
US11837547B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2021 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Jun 30, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photonic integrated circuit (PIC) die includes a silicon nitride optical component over an active region. Multiple interconnect layers are over the silicon nitride optical component, each of the multiple interconnect layers including a metal interconnect therein. At least one optical deflector is over the multiple interconnect layers and over the silicon nitride optical component. The optical deflector(s) may also include a contact passing therethrough to the interconnect layers, but do not include any other electrical interconnects. Each optical deflector may deflect light within an ambient light range of less than 570 nanometers (nm) to protect the silicon nitride optical component from light-induced degradation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.