Bonding structures and methods for forming the same
US11837568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2021 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Aug 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3651
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding structure is provided, wherein the bonding structure includes a first substrate, a second substrate, a first adhesive layer, a second adhesive layer, and a silver feature. The second substrate is disposed opposite to the first substrate. The first adhesive layer is disposed on the first substrate. The second adhesive layer is disposed on the second substrate and opposite the first adhesive layer. The silver feature is disposed between the first adhesive layer and the second adhesive layer. The silver feature includes a silver nano-twinned structure that includes twin boundaries that are arranged in parallel. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.