Semiconductor device and manufacturing method therefor

US11837633B2 · kind B2 · utility

Assignee

• INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD. · CN

Inventors

• King-Yuen Wong · Issaquah, US
• Ronghui Hao · Zhuhai, CN
• Jinhan Zhang · Suzhou, CN

Key dates

• Filing date: Mar 3, 2022
• Grant date: Dec 5, 2023
• Expiry date: Mar 3, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

The HEMT includes a channel layer, a barrier layer, a drain, and a gate conductor. The barrier layer is disposed on the channel layer. The drain is disposed on the barrier layer. The gate conductor is disposed on the barrier layer. The barrier layer comprises a doped semiconductor region extending from a top surface to a bottom surface of the barrier layer and located between the drain and the gate conductor.