Patent · US Active

P-i-n photodetector

US11837677B2 · kind B2 · utility

0Cited by

1References

7Claims

0Family size

Assignee

EMBERION OY · FI

Inventors

Alexander Bessonov · Cambridge, GB
Mark R. Allen · Encinitas, US

Key dates

Filing date	Nov 28, 2019
Grant date	Dec 5, 2023
Priority date	—
Expiry date	Sep 19, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/103

Abstract

A photodetector which comprises a measurement layer (15) and at least a first photoactive layer (11) which covers the measurement layer (15). The measurement layer (15) may be a transistor channel or a charge accumulation electrode. The conductivity type of the measurement layer is n-type, p-type or ambipolar and the first photoactive layer (11) exhibits intrinsic semiconductivity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.