Germanium photodiode

US11837678B2 · kind B2 · utility

Assignee

• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Charles Baudot · Lumbin, FR
• Sebastien Cremer · Hameau du Château, FR
• Nathalie Vulliet · Crolles, FR
• Denis Pellissier-Tanon · Grenoble, FR

Key dates

• Filing date: Sep 27, 2021
• Grant date: Dec 5, 2023
• Expiry date: Dec 23, 2041

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.