Bulk acoustic wave resonator and method of manufacturing the same
US11838001B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2022 |
| Grant date | Dec 5, 2023 |
| Priority date | — |
| Expiry date | Dec 2, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49005
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave resonator and a method of manufacturing the same are provided. The bulk acoustic wave resonator includes: a first carrier substrate; a barrier layer on a main surface of the first carrier substrate and configured to prevent an undesired conductive channel from being generated due to charge accumulation on the main surface; a buffer layer on a side of the barrier layer away from the first carrier substrate; a piezoelectric layer on a side of the buffer layer away from the barrier layer; a first electrode and a second electrode on opposite sides of the piezoelectric layer; a first passivation layer and a second passivation layer, respectively covering sidewalls of the first electrode and the second electrode; a dielectric layer between the first passivation layer and the buffer layer, wherein a first cavity is provided between the first passivation layer and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.