Wafer scale bonded active photonics interposer

US11841531B2 · kind B2 · utility

Assignee

• The Research Foundation for The State University of New York · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• Douglas C. La Tulipe, Jr. · Albany, US
• Gerald L. Leake · Albany, US

Key dates

• Filing date: Jul 29, 2022
• Grant date: Dec 12, 2023
• Expiry date: Jul 29, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.