Dielectric composition, electronic device, and multilayer electronic device
US11842851B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2022 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Jun 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/1218
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dielectric composition includes a main phase and segregation phases each including RE (at least one rare earth element). The main phase includes a main component having a perovskite crystal structure of ABO3 (A is one or more selected from Ba, Sr, and Ca, and B is one or more selected from Ti, Zr, and Hf). The segregation phases are classified into first segregation phases whose atomic ratio of Si to RE is 0 or more and 0.20 or less and second segregation phases whose atomic ratio of Si to the RE is more than 0.20. 0≤S1/S2≤0.10 is satisfied on a cross section of the dielectric composition, where S1 is an area ratio of the first segregation phases, and S2 is an area ratio of the second segregation phases. An atomic ratio of Si to RE in the second segregation phases is 0.80 or less on average.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.