Semiconductor device and power conversion device
US11842895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2019 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Apr 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An SBD includes: a terminal well region formed to surround an active region; a field insulating film formed to cover part of the terminal well region; a surface electrode formed on a drift layer on an inner side in relation to the field insulating film and electrically connected to the terminal well region; a surface protection film covering an end portion on an outer side of the surface electrode; and a back surface electrode formed on a back surface of a single crystal substrate. An end portion of an outer side of the surface electrode in the corner portion of the terminal region is located on an inner side in relation to the end portion of the outer side of the surface electrode in a straight portion of a terminal region based on a position of an end portion of an outer side of the terminal well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.