Semiconductor device without a break region
US11842999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2022 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Feb 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.