Pixel and global shutter image sensor
US11843011B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2021 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Aug 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/709
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel for a global shutter pixel array includes a sensing layer and a storage layer. The sensing layer has a sensing element adapted to provide charges upon receiving radiation and a floating diffusion region for receiving charges from the sensing element. The storage layer has at least one storage node for receiving charges from the sensing layer's floating diffusion region and storing the charges. The sensing layer and storage layer form a stack of layers, the sensing layer covering at least the storage node of the storage layer, and the stack has a light shield between the sensing layer and the storage node of the storage layer, so the storage node is shielded from impinging radiation. The storage node is between two transfer gates. The storage node and its surrounding gates are provided between the first floating diffusion region and a second floating diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.