Structures and methods for controlling dopant diffusion and activation
US11843042B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 18, 2021 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Feb 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.