Power semiconductor device having overvoltage protection and method of manufacturing the same

US11843045B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Markus Beninger-Bina · Großhelfendorf, DE
• Thomas Basler · Riemerling, DE
• Matteo Dainese · Munich, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Aug 28, 2020
• Grant date: Dec 12, 2023
• Expiry date: Feb 11, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/83

Abstract

A chip includes a semiconductor body coupled to a first and a second load terminal. The semiconductor body includes an active region including a plurality of breakthrough cells, each of the breakthrough cells includes: an insulation structure; a drift region; an anode region, the anode region being electrically connected to the first load terminal and disposed in contact with the first load terminal; a first barrier region arranged in contact with each of the anode region and the insulation structure, where the first barrier region of the plurality of breakthrough cells forms a contiguous semiconductor layer; a second barrier region separating each of the anode region and at least a part of the first barrier region from the drift region; and a doped contact region arranged in contact with the second load terminal, where the drift region is positioned between the second barrier region and the doped contact region.