Patent · US Active

Switching device

US11843370B2 · kind B2 · utility

0Cited by
3References
9Claims
0Family size

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Key dates

Filing dateSep 8, 2022
Grant dateDec 12, 2023
Priority date
Expiry dateSep 8, 2042

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02B70/10
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A gate of the first p-type MOS transistor and the first and second control circuits are electrically coupled to a first node. The first control circuit lowers a voltage or the first node between a first time and a second time at which the first p-type MOS transistor is off. The second control circuit lowers the voltage of the first node between a third time and a fourth time at which the first p-type MOS transistor is on. The second time is later than the first time. The fourth time is later than the second and third times. The first p-type MOS transistor is turned on during a first period. A voltage decrease amount of the first node per unit time in the first control circuit is greater than that in the second control circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.